Semiconductor device

ABSTRACT

The present invention has for its purpose to provide a technique capable of reducing planar dimension of the semiconductor device. An input/output circuit is formed over the semiconductor substrate, a grounding wiring and a power supply wiring pass over the input/output circuit, and a conductive layer for a bonding pad is formed thereover. The input/output circuit is formed of MISFET elements in the nMISFET forming region and the pMISFET forming region, resistance elements in the resistance element forming regions and diode elements in the diode element forming regions functioning as protective elements. A wiring connected to the protective elements and positioned under the grounding wiring and the power supply wiring is pulled out in a pulling-out region between the nMISFET forming region and the pMISFET forming region and between the grounding wiring and the power supply wiring to be connected to the conductive layer.

CROSS-REFERENCE TO RELATED APPLICATION

The present application claims priority from Japanese patent applicationNo. 2005-345347 filed on Nov. 30, 2005 the content of which is herebyincorporated by reference into this application.

BACKGROUND OF THE INVENTION

The present invention relates to a semiconductor device, and inparticular, to an effective technique applicable to a semiconductordevice with bonding pads.

Various semiconductor integrated circuits are formed on a semiconductorwafer made of, for example, a single crystal silicon and others and thenthe semiconductor device wafer is separated into semiconductor chips bydicing to manufacture chip-shaped semiconductor devices. On the mainsurface of the semiconductor device a plurality of bonding pads actingas an external terminal are provided along the periphery of thesemiconductor device.

Japanese Unexamined Patent Publication No. Hei09 (1997)-283632 (PatentDocument 1) sets forth a technique in which, in the semiconductor devicewith three or more wiring layers on which a plurality of rows of bondingpads are staggered along the periphery of a semiconductor chip, a firstlead wiring electrically connecting the bonding pad in the inner row toan inner circuit is formed by one or more wiring layers including atleast the wiring of the uppermost layer and a second lead wiringelectrically connecting the bonding pad in the outer row to the innercircuit is formed by a plurality of wirings different from the firstlead wiring.

Japanese Unexamined Patent Publication No. 2003-163267 (Patent Document2) discloses a technique in which, in a semiconductor device providedwith a cell section and a buffer circuit formed to surround the cellsection, a plurality of bonding pads are formed over the periphery ofthe buffer circuit and over the buffer circuit and staggered over theperiphery of the buffer circuit and over the buffer circuit.

(Patent Document 1) Japanese Unexamined Patent Publication No.Hei09(1997)-283632

(Patent Document 2) Japanese Unexamined Patent Publication No.2003-163267 SUMMARY OF THE INVENTION

The inventors, investigation has revealed the following.

There has been demand for; downsizing a semiconductor device andincreasing terminals thereof in recent years. Staggering bonding padsshortens an effective pitch of the bonding pad, which enables morebonding pads to be formed for a semiconductor device of the same sizeand the terminal thereof to be increased in number.

An input/output circuit is provided on each bonding pad and a powersupply wiring is formed along the periphery of the semiconductor device.The input/output circuit is constructed of various elements formed on asemiconductor substrate constituting the semiconductor device. Theinput/output circuit is connected to the bonding pad and the powersupply wiring according to need. Since the bonding pad is formed by theuppermost metallic layer, a wiring to be connected to elementsconstituting the input/output circuit needs drawing up to be connectedto the metallic layer for the bonding pads. If the drawing-up portion isprovided in the end of the input/output circuit forming region and thebonding pad is arranged further outside than the drawing-up portion, theplanar dimension of the semiconductor device requires to be increased bythe bonding pad. In particular, if the bonding pads are staggered, thebonding pads on the side of the inner periphery can be arranged furtherinside than the aforementioned drawing-up portion, however, the bondingpads on the side of the outer periphery needs to be arranged furtheroutside than the drawing-up portion, so that the planar dimension of thesemiconductor device requires to be increased by the bonding pad on theside of the outer periphery. This becomes disadvantageous for downsizingthe semiconductor device.

When the power supply wiring and the bonding pad are formed by themetallic layer of the same layer, if the power supply wiring is arrangedthrough a detour around the input/output circuit, the power supplywiring is reduced in width, which decreases current density. If thepower supply wiring is increased in width to maintain the currentdensity, which increases planar dimension. This also becomesdisadvantageous for downsizing the semiconductor device.

The present invention has for its purpose to provide a technique capableof reducing dimension, or planar dimension, of the semiconductor device.

The above and other objects and novel features of the present inventionwill become more apparent from the description of the specification andthe accompanying drawings.

The following is a brief description of outlines of typical ones out ofthe inventions disclosed in the present specification.

In the present invention, a first and a second power supply wiring passover protective elements formed on the semiconductor substrate andelectrically connected to bonding pads, a first wiring positioned underthe first and the second power supply wiring and electrically connectedto the protective elements is pulled out over the first and the secondpower supply wiring in the pulled-out region between the first and thesecond power supply wiring to be electrically connected to a firstconductive layer for the bonding pads positioned over the first and thesecond power supply wiring.

In the present invention, the protective elements formed over thesemiconductor substrate and electrically connected to the bonding padsinclude MISFET elements. The MISFET elements are formed in a first and asecond MISFET forming region. The first wiring positioned under thepower supply wirings and electrically connected to the protectiveelement is pulled out over the power supply wirings in the pulling-outregion between the first and the second MISFET forming region to beelectrically connected to the first conductive layer for the bondingpads.

The following is a brief description of effects obtained from typicalones out of the inventions disclosed in the present specification.

The dimension (planar dimension) of a semiconductor device can bereduced.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a top view showing a semiconductor device according to oneembodiment of the present invention;

FIG. 2 is a top view showing the principal elements of the semiconductordevice according to one embodiment of the present invention;

FIG. 3 is a top view showing the principal elements of the semiconductordevice according to one embodiment of the present invention;

FIG. 4 is a top view showing the principal elements of the semiconductordevice according to one embodiment of the present invention;

FIG. 5 is a top view showing the principal elements of the semiconductordevice according to one embodiment of the present invention;

FIG. 6 is a cross section showing the principal elements of thesemiconductor device according to one embodiment of the presentinvention;

FIG. 7 is a cross section showing the principal elements of thesemiconductor device according to one embodiment of the presentinvention;

FIG. 8 is a cross section showing the principal elements of thesemiconductor device according to one embodiment of the presentinvention;

FIG. 9 is a cross section showing the principal elements of thesemiconductor device according to one embodiment of the presentinvention;

FIG. 10 is a circuit diagram showing an input/output circuit of thesemiconductor device according to one embodiment of the presentinvention;

FIG. 11 is a top view showing the principal elements of thesemiconductor device according to another embodiment of the presentinvention;

FIG. 12 is a top view showing the principal elements of thesemiconductor device according to another embodiment of the presentinvention;

FIG. 13 is a top view showing the principal elements of thesemiconductor device according to another embodiment of the presentinvention;

FIG. 14 is a cross section showing the principal elements of thesemiconductor device according to another embodiment of the presentinvention;

FIG. 15 is a cross section showing the principal elements of thesemiconductor device according to another embodiment of the presentinvention;

FIG. 16 is a circuit diagram showing an input/output circuit of thesemiconductor device according to another embodiment of the presentinvention;

FIG. 17 is a top view showing the principal elements of thesemiconductor device according to another embodiment of the presentinvention;

FIG. 18 is a top view showing the principal elements of thesemiconductor device according to another embodiment of the presentinvention;

FIG. 19 is a top view showing the principal elements of thesemiconductor device according to another embodiment of the presentinvention;

FIG. 20 is a top view showing the principal elements of thesemiconductor device according to another embodiment of the presentinvention;

FIG. 21 is a cross section showing the principal elements of thesemiconductor device according to another embodiment of the presentinvention;

FIG. 22 is a cross section showing the principal elements of thesemiconductor device according to another embodiment of the presentinvention;

FIG. 23 is a circuit diagram showing an input/output circuit of thesemiconductor device according to another embodiment of the presentinvention; and,

FIG. 24 is a circuit diagram showing an input/output circuit of thesemiconductor device according to another embodiment of the presentinvention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

In the following embodiments, descriptions are divided into pluralsections or embodiments as a matter of convenience as required. However,the descriptions are related to each other except where an explicitstatement is made to some other effect, and a description below is amodification, provides further details, or supplements part or all ofsome other description. When numbers of elements and so on (includingnumbers, values, amounts, and ranges) are referred to in the followingembodiments, the number need not be the stated number, unless anexplicit statement is made to this effect and the number is clearly, inprinciple, limited to specific numbers. The number may be higher orlower than the stated number. Furthermore, in the following embodiments,it is needless to say that constituent elements (including elementsteps) are not always required unless an explicit statement is made tothis effect and the element is clearly, in principle, considered asessential. Similarly, when the shape of a constituent element,positional relationship and others are referred to in the followingembodiments, ones being substantially similar or analogous to the shapeand others should be included unless an explicit statement is made tothis effect and the ones are not clearly, in principle, considered so.This holds true for the values and ranges.

The embodiments of the present invention are described in detail belowwith reference to the drawings. In the all figures for describing theembodiments, the members with the same functions are given the samereference numerals and characters to omit the duplicated descriptionthereof.

In the drawings used in the embodiments, hatching is sometimes omittedfrom a cross section to make it easily viewable. On the other hand,hatching lines are sometimes drawn in a top view or perspective view tomake views easily viewable.

First Embodiment

FIG. 1 is a top view (entire top view) showing a semiconductor device 1according to one embodiment of the present invention. FIG. 1 is a topview, however, hatching is drawn in a power supply wiring 5, a groundingwiring 6, a grounding wiring 7 and a power supply wiring 8 to make themeasily viewable.

The semiconductor device (semiconductor chip) 1 is formed in such amanner that various semiconductor integrated circuits and bonding pads 4are formed on a semiconductor substrate (semiconductor wafer) made of,for example, a single crystal silicon and others and then thesemiconductor substrate is separated into each chip-shaped semiconductordevice (semiconductor chip) 1 by dicing. For this reason, thesemiconductor device 1 is a semiconductor chip.

A core region (cell section and internal circuit forming region) 3 isarranged in the central portion of a main surface 2 of the semiconductordevice 1. Various semiconductor integrated circuits (internal circuits)are formed in the core region 3. The core region 3 is configured byarranging a large number of basic cells constituted by combining aprescribed number of, for example, an n-channel MISFET and a p-channelMISFET in a matrix form. Connecting the MISFETs in the basic cells andthe basic cells to each other based on a logic design realizes a desiredlogic function.

A plurality of bonding pads (pad electrodes, external terminals andexternal connecting terminals) 4 are arranged along the peripheral onthe main surface 2 of the semiconductor device 1. The bonding pads 4 arecapable of functioning as external terminals (external connectingterminals and input/output circuit terminals) of the semiconductordevice 1 to establish an electrical connection to external devices.

The power supply wiring 5 and the grounding wiring 6 for the core region3 are arranged outside the core region 3 on the main surface 2 of thesemiconductor device 1. The grounding wiring 7 and the power supplywiring 8 for an input/output (I/O) are arranged further outside thereof.The power supply wiring 5, the grounding wiring 6, the grounding wiring7 and the power supply wiring 8 extend along the periphery of the mainsurface 2 of the semiconductor device 1, (that is to say, in the Ydirection described later) and are arranged outside the core region 3(on the side of the periphery of the main surface 2 of the semiconductordevice 1, that is, on the side of an end 2 a). The power supply wiring 5and the grounding wiring 6 for the core region 3 are arranged inside thegrounding wiring 7 and the power supply wiring 8 for input/output (onthe inner side of main surface 2 of the semiconductor device 1). Forexample, the power supply wiring 5, the grounding wiring 6, thegrounding wiring 7 and the power supply wiring 8 are arranged in thisorder from inside to outside.

The power supply wiring 5 for the core region 3 is a wiring forsupplying a power-supply electric potential (fixed electric potentialand reference electric potential) to circuits and elements of the coreregion 3. The grounding wiring 6 for the core region 3 is a wiring forsupplying a grounding electric potential to circuits and elements of thecore region 3. The grounding wiring 7 is a wiring for supplying agrounding electric potential to an input/output circuit 11 describedlater. The power supply wiring 8 is a wiring for supplying apower-supply electric potential (fixed electric potential and referenceelectric potential) to the input/output circuit 11. Turning on the powersupply of the semiconductor device 1 applies a constant voltage acrossthe power supply wiring 5, the grounding wiring 6, the grounding wiring7 and the power supply wiring 8. For example, turning on the powersupply of the semiconductor device 1 applies a grounding electricpotential across the grounding wirings 6 and 7 and applies apower-supply electric potential (fixed electric potential and referenceelectric potential) different from each other across the power supplywirings 5 and 8.

It is more preferable to supply a grounding electric potential acrossthe grounding wirings 6 and 7, but it is also possible to supply anon-grounding electric potential, or a power-supply electric potential(fixed electric potential and reference electric potential). At thispoint, at least a power-supply electric potential different from one tobe applied across the power supply wiring 5 is applied across thegrounding wiring 6, and a power-supply electric potential different fromone to be applied across the power supply wiring 8 is applied across thegrounding wiring 7. Therefore, not only the power supply wirings 5 and 8but the grounding wirings 6 and 7 may be regarded as power supplywirings. For example, one of the grounding wiring 7 and the power supplywiring 8 may be regarded as a first power supply wiring (power supplywiring at a first electric potential) and the other may be regarded as asecond power supply wiring (power supply wiring at a second electricpotential different from the first electric potential). In addition, oneof the power supply wiring 5 and the grounding wiring 6 may be regardedas a third power supply wiring (power supply wiring at a third electricpotential) and the other may be regarded as a fourth power supply wiring(power supply wiring at a fourth electric potential different from thethird electric potential).

A plurality of the bonding pads 4 provided on the main surface 2 of thesemiconductor device 1 are arranged in two rows along each side of thesemiconductor device 1. The position of the bonding pads 4 is displacedby half pitch between the rows, in other words, the bonding pads 4 arestaggered. For instance, a plurality of the bonding pads 4 are arrangedin two rows along each side of the semiconductor device 1 and theposition of the bonding pads 4 is displaced by half pitch between therows. A first bonding pad 4 a near the end 2 a of the semiconductordevice 1 and a second bonding pad 4 b positioned further inside thesemiconductor device 1 than the first bonding pad 4 a are alternatelyarranged. Staggering the bonding pads 4 shortens an effective pitch ofthe bonding pad 4, allowing more bonding pads to be formed on asemiconductor device of the same size, which enables the terminal of thesemiconductor device to be increased in number.

FIGS. 2 to 5 are top views showing the principal elements of thesemiconductor device 1 according to the present embodiment andillustrate the periphery of the semiconductor device 1. FIGS. 6 to 9 arecross sections showing the principal elements of the semiconductordevice 1 according to the present embodiment. FIG. 10 is a circuitdiagram (equivalent circuit diagram) showing the input/output circuit 11of the semiconductor device 1 according to the present embodiment. FIGS.2 to 5 show the same region. FIG. 2 shows a planar layout of theinput/output circuit 11 and a circuit 15. FIG. 3 corresponds to a figurein which the power supply wiring 5, the grounding wiring 6, thegrounding wiring 7 and the power supply wiring 8 are added to FIG. 2.FIG. 4 corresponds to a figure in which the power supply wiring 5, thegrounding wiring 6, a conductive layer 51 and the bonding pad 4 areadded to FIG. 2. FIG. 5 shows a planar layout of the input/outputcircuit 11, the power supply wiring 5, the grounding wiring 6, thegrounding wiring 7, the power supply wiring 8, the conductive layer 51and the bonding pad 4. A cross section along line A-A in FIG. 2corresponds to FIG. 6. A cross section along line B-B in FIG. 2corresponds to FIG. 7. A cross section along line C-C in FIG. 2corresponds to FIG. 8. A cross section along line D-D in FIG. 2corresponds to FIG. 9.

A plurality of the input/output circuits 11 (input/output circuitsections, input/output buffer circuits, buffer circuits, I/O circuitsand I/O buffer circuits) are arranged along the periphery of the mainsurface 2 of the semiconductor device 1. The bonding pads 4corresponding to the input/output circuits 11 are arranged in thevicinity thereof and electrically connected to the input/output circuits11 respectively. A plurality of the bonding pads 4 and of theinput/output circuits 11 are so arranged as to surround the core region3 therearound.

As can be seen from the circuit diagram in FIG. 10, the input/outputcircuit 11 includes the n-channel MISFET Qn1 (hereinafter referred to as“nMISFET Qn1”) for output (for output control and input/output control),the p-channel MISFET Qp1 (hereinafter referred to as “pMISFET Qp1”) foroutput (for output control and input/output control) and resistanceelements R1 and R2 for protection and diode elements D1 and D2 forprotection. The bonding pads 4 are electrically connected to thegrounding wiring 7 and the power supply wiring 8 through theinput/output circuit 11.

The bonding pads 4 are electrically connected to the input/outputcircuit 11 and electrically connected to the grounding wiring 7 and thepower supply wiring 8 through the input/output circuit 11. Specifically,the bonding pads 4 are electrically connected to one of the source orthe drain (the drain in this case) of the nMISFET Qn1 through theresistance element R1 and electrically connected to one of the source orthe drain (the drain in this case) of the pMISFET Qp1 through theresistance element R2. The other of the source or the drain (the sourcein this case) of the nMISFET Qn1 is electrically connected to thegrounding wiring 7 for input/output and the other of the source or thedrain (the source in this case) of the pMISFET Qp1 is electricallyconnected to the power supply wiring 8 input/output. The gate electrodesof the nMISFET Qn1 and the pMISFET Qp1 are electrically connected to thecircuit 15, or circuits or elements in the core region 3. The bondingpads 4 are electrically connected to the grounding wiring 7 via a diodeD1 and are electrically connected to the power supply wiring 8 via thediode D2.

The diodes D1 and D2 and the resistance elements R1 and R2 among theelements constituting the input/output circuit 11 are capable offunctioning as elements for protection (protective element). Forexample, when a surge (ESD surge) is inputted into the bonding pads 4,the resistance elements R2 and R2 prevent the surge from being inputtedinto the nMISFET Qn1 and the pMISFET Qp1 to pass it to the groundingwiring 7 or the power supply wiring 8 through the diodes D1 or D2. Inother words, the diodes D1 and D2 and the resistance elements R1 and R2prevent the surge (ESD surge) from being inputted into the nMISFET Qn1and the pMISFET Qp1, which permits the nMISFET Qn1 and the pMISFET Qp1to be protected. Thus, the protective elements (the diodes D1 and D2 andthe resistance elements R1 and R2) are electrically connected to thebonding pads 4. These protective elements are formed on thesemiconductor substrate 30 as discussed later.

The nMISFET Qn1 and the pMISFET Qp1 among the elements constituting theinput/output circuit 11 are capable of functioning as elements foroutput control (for input/output control). For instance, turning on andoff nMISFET Qn1 and/or turning on and off the pMISFET Qp1 allow theoutput (input/output) of the bonding pads 4 to be controlled.

It is preferable that a connection relationship between the nMISFET Qn1and the pMISFET Qp1 shown in FIG. 10 is applied when the input/outputcircuit 11 acts as an output circuit and the bonding pad 4 acts as abonding pad for outputting signals. When the input/output circuit 11acts as an input circuit and the bonding pad 4 acts as a bonding pad forinputting signals, a connection relationship between the nMISFET Qn1 andthe pMISFET Qp1 can be changed from one in FIG. 10. For example, thebonding pad 4 can be electrically connected to the gate of the nMISFETQn1 through the resistance element R1 or to the gate of the pMISFET Qp1through the resistance element R2. In this case, one of the source orthe drain of the nMISFET Qn1 may be electrically connected to thegrounding wiring 7, one of the source or the drain of the pMISFET Qp1may be electrically connected to the power supply wiring 8, the other ofthe source or the drain of the nMISFET Qn1 and the other of the sourceor the drain of the p-channel MISFET Qp1 may be electrically connectedto the circuit 15, or the circuits or elements of the core region 3.Thus, even if a connection relationship between the nMISFET Qn1 and thepMISFET Qp1 is changed, the present embodiment is applicable. For thisreason, it is preferable that the present embodiment is applied when thebonding pad 4 is used for input/output or for inputting/outputtingsignals.

As shown in FIGS. 2 to 9, the nMISFET forming region 21, the resistanceelement forming region 22, the diode element forming region 23, thepulling-out region 24, the diode element forming region 25, theresistance element forming region 26 and the pMISFET forming region 27are arranged on the periphery of the main surface 2 of the semiconductordevice 1 in this order in the direction from the inside (the inner sideof the main surface 2 of the semiconductor device 1) to the periphery(the side of end 2 a of the main surface 2 of the semiconductor device1), i.e., in the X-direction in FIGS. 2 to 6. A Y-direction in FIGS. 2to 6 is a (parallel) direction along four sides (ends 2 a) of the mainsurface 2 of the semiconductor device 1 and the X-direction is adirection orthogonal (intersects) to the Y-direction. Along theX-direction (in parallel), the nMISFET forming region 21, the resistanceelement forming region 22, the diode element forming region 23, thepulling-out region 24, the diode element forming region 25, theresistance element forming region 26 and the pMISFET forming region 27are arranged in this order. Since the grounding wiring 7 and the powersupply wiring 8 extend to the Y-direction, the nMISFET forming region21, the resistance element forming region 22, the diode element formingregion 23, the pulling-out region 24, the diode element forming region25, the resistance element forming region 26 and the pMISFET formingregion 27 are arranged in this order in the direction (X-direction)intersecting (preferably orthogonal) with the direction (Y-direction) towhich the grounding wiring 7 and the power supply wiring 8 extend.

The nMISFET forming region 21 is a region where a Metal InsulatorSemiconductor Field Effect Transistor (MISFET) corresponding to thenMISFET Qn1 is formed. The resistance element forming region 22 is aregion where a resistance element corresponding to the resistanceelement R1 is formed. The diode element forming region 23 is a regionwhere a diode element corresponding to the diode D1 is formed. The diodeelement forming region 25 is a region where a diode elementcorresponding to the diode D2 is formed. The resistance element formingregion 26 is a region where a resistance element corresponding to theresistance element R2 is formed. The pMISFET forming region 27 is aregion where a MISFET corresponding to the pMISFET Qp1 is formed. Thus,the input/output circuit 11 is formed by the nMISFET forming region 21(nMISFET Qn1), the resistance element forming region 22 (resistanceelement R1), the diode element forming region 23 (diode D1), the diodeelement forming region 25 (diode D2), the resistance element formingregion 26 (resistance element R2) and the pMISFET forming region 27(pMISFET Qp1). The input/output circuit 11 is provided on each bondingpad 4.

The circuit 15 is a circuit region where, for example, a level shifter,an input/output (I/O) control logic section and others are formed and isprovided further inside the input/output circuit 11 on the main surface2 of the semiconductor device 1. The power supply wiring 5 and thegrounding wiring 6 run over the circuit 15.

The configuration of periphery of the semiconductor device 1 isdescribed in further detail with reference to FIGS. 2 to 9.

The nMISFET forming region 21, the resistance element forming region 22,the diode element forming region 23, the diode element forming region25, the resistance element forming region 26 and the pMISFET formingregion 27 are arranged over the main surface of the semiconductorsubstrate (semiconductor wafer) 30 primarily constructed of, forexample, p-type single crystal silicon. The regions are electricallyseparated from one another by element isolating regions 31 formed overthe main surface of the semiconductor substrate 30. The elementisolating region 31 includes an insulating material such as siliconoxide and others (field insulating film or embedded insulating film) andmay be formed by Shallow Trench Isolation (STI) method or LocalOxidation of Silicon (LOCOS) method.

A p-type well (p-type semiconductor region) 32 and an n-type well(n-type semiconductor region) 33 are formed on the main surface of thesemiconductor substrate 30. The p-type well 32 is formed in the regiontwo-dimensionally including the nMISFET forming region 21, theresistance element forming region 22 and the diode element formingregion 23. The n-type well 33 is formed in the region two-dimensionallyincluding the diode element forming region 25, the resistance elementforming region 26 and the pMISFET forming region 27.

A plurality of gate electrodes 34 are formed over the p-type well 32through a gate insulation film (not shown) so as to extend in theX-direction in the nMISFET forming region 21. The n-type semiconductorregions (n-type diffused layer) 35 as a source and a drain are formed inregions on both sides of the gate electrode 34. Among the n-typesemiconductor regions 35, an n-type semiconductor region 35 d functionsas one of a source or a drain (drain region in this case) and an n-typesemiconductor region 35 s functions as one of a source or drain (sourceregion in this case). A plurality of the gate electrodes 34 include, forinstance, lower resistance polycrystalline silicon (doped polysilicon)film and are electrically connected to each other by wirings (not,shown). The n-channel MISFET constituting the nMISFET Qn1 is formed bythe gate electrode 34, the gate insulation film (not shown) under thegate electrode 34 and the n-type semiconductor region 35 (35 d and 35 s)as a source and a drain.

The pMISFET forming region 27 is almost the same in configuration as thenMISFET forming region 21 reversed in terms of conductivity type. Thatis to say, a plurality of gate electrodes 36 are formed over the n-typewell 33 through a gate insulation film (not shown) so as to extend inthe X-direction in the pMISFET forming region 27. The p-typesemiconductor regions (p-type diffused layer) 37 as a source and a drainare formed in regions on both sides of the gate electrode 36. Among thep-type semiconductor regions 37, a p-type semiconductor region 37 dfunctions as one of a source or a drain (drain region in this case) anda p-type semiconductor region 37 s functions as one of a source or adrain (source region in this case). A plurality of the gate electrodes36 include, for instance, lower resistance polycrystalline silicon(doped polysilicon) film and are electrically connected to each other bywirings (not shown). The p-channel MISFET constituting the pMISFET Qp1is formed by the gate electrode 36, the gate insulation film (not shown)under the gate electrode 36 and the p-type semiconductor region 37 (37 dand 37 s) as a source and a drain.

All over the resistance element forming region 22 is formed the elementisolating region 31, on which a plurality of the resistance elements 38(the resistance element 38 constituting the resistance element R1)including, for example, polycrystalline silicon (doped polysilicon) filminto which impurities are introduced are formed.

The resistance element forming region 26 is substantially the same inconfiguration as the resistance element forming region 22. That is, allover the resistance element forming region 26 is formed the elementisolating region 31, on which a plurality of the resistance elements 39(the resistance element 39 constituting the resistance element R2)including, for example, polycrystalline silicon (doped polysilicon) filminto which impurities are introduced are formed.

The resistance elements 38 and 39 may be formed in such a manner that apolycrystalline silicon film into which impurities are introduced isformed over the semiconductor substrate 30 and patterned by aphotolithography method and a dry etching method. The resistance valueof the resistance elements 38 and 39 is controlled within a desiredvalue by adjusting the concentration of impurities introduced into thepolycrystalline silicon film constituting the resistance elements 38 and39, the dimensions of the polycrystalline silicon film constituting theresistance elements 38 and 39 and distance between the contacts (plugsPG) connected to the resistance elements 38 and 39.

In the diode element forming region 23, the n-type semiconductor region(n-type diffused layer) 41 and the p-type semiconductor region (p-typediffused layer) 42 are two-dimensionally formed adjacently to each otheron the p-type well 32. For example, the n-type semiconductor region 41and the p-type semiconductor region 42 extending in the X-direction arealternately arranged in the Y-direction. The diode element (the diodeelement constituting the diode element D1) is formed by a PN junctionbetween the n-type semiconductor region 41 and the p-type semiconductorregion 42. Incidentally, the p-type semiconductor region 42 may beconstructed of a part of the p-type well 32.

The diode element forming region 25 is almost the same in configurationas the diode element forming region 23 reversed in terms of conductivitytype. That is, in the diode element forming region 25, the p-typesemiconductor region (p-type diffused layer) 43 and the n-typesemiconductor region (n-type diffused layer) 44 are two-dimensionallyformed adjacently to each other on the n-type well 33. The diode element(the diode element constituting the diode element D2) is formed by a PNjunction between the p-type semiconductor region 43 and the n-typesemiconductor region 44.

For example, the p-type semiconductor region 43 and the n-typesemiconductor region 44 extending in the X-direction are alternatelyarranged in the Y-direction. Incidentally, the n-type semiconductorregion 44 may be constructed of a part of the p-type well 33.

On the main surface 2 of the semiconductor substrate 30, p-typesemiconductor regions (p-type diffused layer) 46 as a guard ring areformed around the nMISFET forming region 21 and the diode elementforming region 23. In addition, on the main surface 2 of thesemiconductor substrate 30, n-type semiconductor regions (n-typediffused layer) 47 as a guard ring are formed around the diode elementforming region 25 and the pMISFET forming region 27. The p-typesemiconductor region 46 may be constructed of a part of the p-type well32. In addition, the n-type semiconductor region 47 may be constructedof a part of the n-type well 33.

FIGS. 6 and 8 show cross sections (in the X-direction) passing throughthe n-type semiconductor region 35 d (drain region) in the nMISFETforming region 21, the resistance element 38 in the resistance elementforming region 22, the n-type semiconductor region 41 in the diodeelement forming region 23, the p-type semiconductor region 43 in thediode element forming region 25, the resistance element 39 in theresistance element forming region 26 and the p-type semiconductor region37 d (drain region) in the pMISFET forming region 27. In addition, FIGS.7 and 9 show cross sections (in the X-direction) passing through then-type semiconductor region 35 s (source region) in the nMISFET formingregion 21, the region where the resistance element 38 is not formed inthe resistance element forming region 22, the p-type semiconductorregion 42 in the diode element forming region 23, the n-typesemiconductor region 44 in the diode element forming region 25, theregion where the resistance element 39 is not formed in the resistanceelement forming region 26 and the p-type semiconductor region 37 s(source region) in the pMISFET forming region 27.

A plurality of interlayer insulating films and of wiring layers areformed over the semiconductor substrate 30. The semiconductor device 1has a multilayer wiring structure over the semiconductor substrate 30.The cross sections shown in FIGS. 6 to 9 integrally illustrate aplurality of interlayer insulating films and the uppermost layer of aprotective film (surface protective film and insulating film) as aninsulating film 50 to make them easily viewable.

As shown in FIGS. 6 to 9, on the main surface 2 of the semiconductorsubstrate 30, a first, second, third, fourth, fifth, sixth and seventhlayer wirings M1, M2, M3, M4, M5, M6 and M7 are formed in this orderfrom the bottom. The first layer wiring M1 is formed of, for example, apatterned tungsten film and the like. The second, third, fourth, fifth,sixth and seventh layer wirings M2, M3, M4, M5, M6 and M7 are formed ofan embedded copper wiring formed by a damascene method (single or dualdamascene method). As another embodiment, the wirings M2 to M7 may beformed of aluminum made of aluminum alloy film on which the wirings M2to M7 are patterned.

Interlayer insulating films (insulating film 50) including silicon oxidefilm or low dielectric-constant insulating film (so-called low-k film)are formed between the semiconductor substrate 30 and the first layerwiring M1 and among the wirings M1 to M7. The wirings M1 to M7 areelectrically connected to one another through conductive plugs PG formedin the interlayer insulating films according to need. If the wirings M2to M7 are formed by the dual damascene method, the plugs PG areintegrally formed with the wirings M2 to M7. The first layer wiring M1is electrically connected to elements (semiconductor elements or passiveelements) formed on the main surface of the semiconductor substrate 30through conductive plugs PG formed in the interlayer insulating filmsaccording to need.

The conductive layer (conductive film, metallic layer) 51 for thebonding pad 4 is formed over the seventh layer wiring M7 as theuppermost metallic layer (wiring layer, an eighth layer wiring). Theconductive layer 51 forms the bonding pad 4. The conductive layer 51 isformed of, for instance, patterned aluminum alloy film (metallic layer).An interlayer insulating film (not shown) is formed between theconductive layer 51 and the seventh layer wiring. On the conductivelayer 51 a protective film (the insulating film 50) made of aninsulating material is formed to be the uppermost layer film (surfacefilm) of the semiconductor device 1. The bonding pad 4 is formed of apart of the conductive layer 51 exposed from the opening 52 formed onthe protective film. For this reason, the bonding pad 4 is integrallyformed with the conductive layer 51, and a part of the conductive layer51 is the bonding pad 4. In other words, the bonding pad 4 is formed bya part of the conductive layer 51.

The grounding wiring 7 and the power supply wiring 8 are formed by thefourth, fifth, sixth, and seventh layer wirings M4, M5, M6, and M7 andthe plugs PG connecting between the wirings M4, M5, M6, and M7. Thegrounding wiring 7 and the power supply wiring 8 extend along theperiphery (four sides) of the semiconductor device 1, i.e., along theY-direction.

The damascene method is a technique in which a conductive film is formedon an interlayer insulating film to be embedded in a wiring openingformed in the interlayer insulating film and the conductive film outsidethe wiring opening is removed by a CMP method or the like to be embeddedin the wiring opening to form an embedded wiring. An excessively widewiring opening can cause dishing at the time of CMP. For this reason, inFIGS. 6 to 9, the wiring on the same layer among the wirings forming thegrounding wiring 7 is divided into plural wirings and synthesized toconstitute the grounding wiring 7. Similarly, the wiring on the samelayer among the wirings forming the grounding wiring 8 is divided intoplural wirings and synthesized to constitute the grounding wiring 8.This enables avoiding dishing at the time of CMP in the damascenemethod. Incidentally, in FIGS. 3 and 5, the grounding wiring 7 and thepower supply wiring 8 are illustrated as an integrated pattern to makethem easily viewable. If the grounding wiring 7 and the power supplywiring 8 are formed of aluminum wirings without the use of the damascenemethod, the wiring on the same layer among the wirings forming thegrounding wiring 7 may be integrally formed, and similarly, the wiringon the same layer among the wirings forming the grounding wiring 8 maybe integrally formed.

In addition, the grounding wiring 7 and the power supply wiring 8 extendto pass through over the region for forming the input/output circuit 11in the Y-direction. In other words, the grounding wiring 7 and the powersupply wiring 8 extend in the Y-direction along the periphery of thesemiconductor device 1 to pass through over the nMISFET forming region21, the resistance element forming region 22, the diode element formingregion 23, the diode element forming region 25, the resistance elementforming region 26 and the pMISFET forming region 27 constituting theinput/output circuit 11. In the present embodiment, both the groundingwiring 7 and the power supply wiring 8 extend along the main surface 2of the semiconductor device 1, and the power supply wiring 8 is arrangedoutside (on the side of the periphery of the main surface 2 of thesemiconductor device 1) the grounding wiring 7. For this reason, thegrounding wiring 7 passes through over the nMISFET forming region 21,the resistance element forming region 22 and the diode element formingregion 23, and the power supply wiring 8 passes through over the diodeelement forming region 25, the resistance element forming region 26 andthe pMISFET forming region 27. As another embodiment, the groundingwiring 7 may be interchanged in position with the power supply wiring 8(i.e., the power supply wiring 8 is inside and the grounding wiring 7 isoutside), in that case, it is more preferable that the nMISFET formingregion 21, the resistance element forming region 22, the diode elementforming region 23, the diode element forming region 25, the resistanceelement forming region 26 and the pMISFET forming region 27 are arrangedin the opposite order.

The bonding pad 4 and the conductive layer 51 used for forming thebonding pad 4 are positioned over the grounding wiring 7 and the powersupply wiring 8. The conductive layer 51 may be regarded as a conductivelayer positioned over the grounding wiring 7 and the power supply wiring8 and electrically connected to the bonding pad 4.

The bonding pad 4, the grounding wiring 7, the power supply wiring 8,the MISFET in the nMISFET forming region 21, the resistance elements 38(R1) and 39 (R2) in the resistance element forming regions 22 and 26,the diode elements (D1 and D2) in the diode element forming regions 23and 25 and the MISFET in the pMISFET forming region 27 are electricallyconnected to each other through the plugs PG, the wirings M1 to M7 andthe conductive layer 51 according to need as shown in FIGS. 2 to 9,forming the input/output circuit 11 with a circuit configuration shownin FIG. 10.

The grounding wiring 7 and the power supply wiring 8 extend in theY-direction along the periphery of the semiconductor device 1. In thepresent embodiment, the pulling-out region (wiring pulling-out region,wiring drawing up region, wiring taking-out region and pad taking-outsection) 24 for the wiring 53 is provided between the grounding wiring 7and the power supply wiring 8. The pulling-out region 24 is a region(part) where the wiring 53 (the first wiring) electrically connected toelements (where, the resistance elements R1 and R2 and the diodeelements D1 and D2 that are protective elements constituting theinput/output circuit 11) formed on the semiconductor substrate 30 andpositioned under the grounding wiring 7 and the power supply wiring 8 ispulled out (taken out and drawn up) over the grounding wiring 7 and thepower supply wiring 8 and connected to the conductive layer 51 for thebonding pad 4.

That is to say, the wiring 53 is electrically connected to theprotective elements (the resistance elements 38 (R1) and 39 (R2) in theresistance element forming regions 22 and 26 and the diode elements D1and D2 in the diode element forming regions 23 and 25) constituting theinput/output circuit 11 formed on the semiconductor substrate 30 throughthe plugs PG. The wiring 53 lies under the bonding pad 4, the conductivelayer 51, the grounding wiring 7 and the power supply wiring 8 and isformed of, for example, the first, second and third layer wirings M1, M2and M3 and the plugs PG connecting the wirings M1, M2 and M3.

The wiring 53 is positioned under the grounding wiring 7 and the powersupply wiring 8, however, the protective elements (the resistanceelements R1 and R2 and the diode elements D1 and D2) over thesemiconductor substrate 30 connected to the wiring 53 via the plugs PGneed electrically connecting to the bonding pad 4, so that the wiring 53requires to be pulled out (drawing up and taking out) over the groundingwiring 7 and the power supply wiring 8 to be electrically connected tothe conductive layer 51 for the bonding pad 4. For the above reason, inthe present embodiment, the wiring 53 is pulled out over the groundingwiring 7 and the power supply wiring 8 in the pulling-out region 24between the grounding wiring 7 and the power supply wiring 8 to beelectrically connected to the conductive layer 51. Thus, the pulling-outregion 24 is a part (conductive portion) that electrically connectsbetween the conductive layer 51 and the wiring 53 and includes, forexample, the second, third, fourth, fifth, sixth and seventh layerwirings M2, M3, M4, M5, M6 and M7, the conductive layer 51 and the plugsPG electrically connecting therebetween.

In addition, it may be regarded that the pulling-out region 24 isarranged between a group including the nMISFET forming region 21, theresistance element forming region 22 and the diode element formingregion 23 and a group including the pMISFET forming region 27, theresistance element forming region 26 and the diode element formingregion 25 and the wiring 53 is pulled out over the grounding wiring 7and the power supply wiring 8 to be electrically connected to theconductive layer 51. Furthermore, it may be regarded that thepulling-out region 24 is arranged between the nMISFET forming region 21and the pMISFET forming region 27 of the input/output circuit 11.

As stated above, in FIGS. 6 and 8, the wiring 53 electrically connectedto the conductive layer 51 for the bonding pad 4 through the pulling-outregion 24 is electrically connected to one end of the resistance element38 in the resistance element forming region 22, the n-type semiconductorregion 41 in the diode element forming region 23, the p-typesemiconductor region 43 in the diode element forming region 25 and oneend of the resistance element 39 in the resistance element formingregion 26 through the plugs PG and others. The other end of theresistance element 38 in the resistance element forming region 22 iselectrically connected to the n-type semiconductor region 35 d (drainregion) in the nMISFET forming region 21 through the first, second andthird layer wirings M1, M2 and M3 and the plugs PG. The other end of theresistance element 39 in the resistance element forming region 26 iselectrically connected to the p-type semiconductor region 37 d (drainregion) in the pMISFET forming region 27 through the first, second andthird layer wirings M1, M2 and M3 and the plugs PG. As shown in FIGS. 7and 9, the n-type semiconductor region 35 s (source region) in thenMISFET forming region 21 is electrically connected to the groundingwiring 7 through the wiring 55. The p-type semiconductor region 37 s(source region) in the pMISFET forming region 27 is electricallyconnected to the power supply wiring 8 through the wiring 56. Thewirings 55 and 56 are wirings positioned under the grounding wiring 7and the power supply wiring 8 and include the first, second and thirdlayer wirings M1, M2 and M3 and the plugs PG. The wirings 53, 55 and 56are positioned on the same layer, however, they are different from eachother. The circuit configuration shown in FIG. 10 is thus realized.

Furthermore, in the present embodiment, a plurality of the bonding pads4 are staggered. That is, a plurality of the bonding pads 4 are arrangedin two rows along each side of the semiconductor device 1. The positionof the bonding pads 4 is displaced by half pitch between the rows. Thefirst bonding pad 4 a near the end of the semiconductor device 1 and thesecond bonding pad 4 b positioned further inside than the first bondingpad 4 a in the semiconductor device 1 are alternately arranged. For thisreason, as shown in FIGS. 4 and 6, the wiring 53 is pulled out in thepulling-out region 24 to be connected to the conductive layer 51 andcaused to extend along the X-direction toward the end 2 a of thesemiconductor device 1 and to be exposed from the opening 52 of theprotective film, thereby forming the first bonding pad 4 a near the endof the semiconductor device 1. As shown in FIGS. 4 and 8, the wiring 53is pulled out in the pulling-out region 24 to be connected to theconductive layer 51 and caused to extend along the X-direction oppositeto the direction toward the end 2 a of the semiconductor device 1 (i.e.,in the direction toward the inner side of the main surface 2 of thesemiconductor device 1) and to be exposed from the opening 52 of theprotective film, thereby forming the second bonding pad 4 b positionedfurther inside than the first bonding pad 4 a in the semiconductordevice 1.

In addition, the grounding wiring 8 is arranged under the first bondingpad 4 a. The diode element forming region 25, the resistance elementforming region 26 and the pMISFET forming region 27 are arranged underthe power supply wiring 8. Furthermore, the grounding wiring 7 isarranged under the second bonding pad 4 b. The nMISFET forming region21, the resistance element forming region 22 and the diode elementforming region 23 are arranged under the grounding wiring 7. For thisreason, the grounding wiring 7 and the power supply wiring 8 passthrough over the protective elements (the resistance elements 38 (R1)and 39 (R2) in the resistance element forming regions 22 and 26 and thediode elements D1 and D2 in the diode element forming regions 23 and 25)constituting the input/output circuit 11. In addition, the bonding pad 4is arranged (exists) over the protective elements (the resistanceelements 38 (R1) and 39 (R2) in the resistance element forming regions22 and 26 and the diode elements D1 and D2 in the diode element formingregions 23 and 25) constituting the input/output circuit 11.

Unlike the present embodiment, when the pulling-out region 24 isprovided outside the power supply wiring 8 (on the side of the end 2 aof the semiconductor device 1) instead of between the grounding wiring 7and the power supply wiring 8 and the wiring 53 is pulled out over thegrounding wiring 7 and the power supply wiring 8 and connected to theconductive layer 51 (hereinafter referred to as “a first comparisonexample”), the bonding pad is provided further outside than thepulling-out region 24, so that a semiconductor device requires to beincreased in planar dimension by the bonding pad. Particularly, when thebonding pads are staggered, the bonding pads on the inner peripheralside can be arranged further inside than the pulling-out region 24,however, the bonding pads on the outer peripheral side needs to bearranged outside the pulling-out region 24, so that a semiconductordevice requires to be increased in planar dimension by the bonding padin the first comparison example. This causes a disadvantage indownsizing a semiconductor device.

In contrast to the above, in the present embodiment, the pulling-outregion 24 is provided between the grounding wiring 7 and the powersupply wiring 8, and the wiring 53 is pulled out over the groundingwiring 7 and the power supply wiring 8 to be (electrically) connected tothe conductive layer 51. For this reason, even when the bonding pad 4 isarranged further outside than the pulling-out region 24 (on the side ofthe end 2 a of the semiconductor device 1), the bonding pad 4 can bearranged further inside by the position where the pulling-out region 24is positioned further inside than the power supply wiring 8. That is tosay, the bonding pad 4 can be arranged over the input/output circuit 11(I/O cell) including the nMISFET forming region 21, the resistanceelement forming region 22, the diode element forming region 23, thediode element forming region 25, the resistance element forming region26 and the pMISFET forming region 27. In other word, the bonding pad 4can be arranged over the protective elements (the resistance elements 38(R1) and 39 (R2) in the resistance element forming regions 22 and 26 andthe diode elements D1 and D2 in the diode element forming regions 23 and25). This allows the semiconductor device 1 to be reduced in planardimension, enabling downsizing the semiconductor device 1.

When the bonding pad 4 is staggered, in particular, it is preferablethat the second bonding pad 4 b on the inner peripheral side is arrangedfurther inside than the pulling-out region 24 (on the inner side of themain surface 2 of the semiconductor device 1) and the first bonding pad4 a on the outer peripheral side is arranged further outside than thepulling-out region 24 (on the side of end 2 a of the main surface 2 ofthe semiconductor device 1). In the present embodiment, since thepulling-out region 24 is provided between the grounding wiring 7 and thepower supply wiring 8, not only the second bonding pad 4 b on the innerperipheral side but the first bonding pad 4 a on the outer peripheralside can be arranged over the input/output circuit 11 (I/O cell). Forthis reason, even when the bonding pads 4 are staggered, there is noneed to increase the semiconductor device in planar dimension by thedimension of the bonding pad 4. Consequently, this allows the bondingpad 4 to be staggered without increasing the planar dimension, whichmakes it compatible to downsize the semiconductor device 1 and increaseterminals thereof (i.e., increasing the number of the bonding pads 4 andnarrowing the pitches between the bonding pad 4). The distance from thepulling-out region 24 (length along which the conductive layer 51extends, i.e., wiring length) to both the first bonding pad 4 a on theouter peripheral side and the second bonding pad 4 b on the innerperipheral side can be equalized to each other, so that thecharacteristics of the first and second bonding pads 4 a and 4 b can beunified, which allows further improving the characteristics of thesemiconductor device having the staggered bonding pads 4.

The power supply wiring 5 and the grounding wiring 6 do not impair theperformance of the core region 3 by leaving the circular wiring on theuppermost layer.

Two MISFET elements (i.e., the nMISFET Qn1 and the pMISFET Qp1) used inthe input/output circuit 11 are formed in two different regions (thenMISFET forming region 21 and the pMISFET forming region 27)respectively and the pulling-out region 24 is provided between thenMISFET forming region 21 and the pMISFET forming region 27. For thisreason, the pulling-out region 24 can be arranged around the center ofthe input/output circuit 11, which enables the bonding pad 4 to bearranged at a position near the center of the input/output circuit 11.That is to say, even though the bonding pad 4 is arranged furtheroutside than the pulling-out region 24 (on the side of end of thesemiconductor device 1), the bonding pad 4 can be arranged furtherinside by the position where the pulling-out region 24 is positionedfurther inside (on the inner side of the main surface 2 of thesemiconductor device 1) than the pMISFET forming region 27. This allowsthe semiconductor device 1 to be reduced in planar dimension, enablingdownsizing the semiconductor device.

In addition, in the present embodiment, the grounding wiring 7 and thepower supply wiring 8 are arranged over the protective elements (theresistance elements 38 (R1) and 39 (R2) in the resistance elementforming regions 22 and 26 and the diode elements D1 and D2 in the diodeelement forming regions 23 and 25) and the nMISFET forming region 21 andthe pMISFET forming region 27, i.e., over the input/output circuit 11(I/O cell). Furthermore, the bonding pad 4 (the conductive layer 51) isarranged over the grounding wiring 7 and the power supply wiring 8.Arranging the bonding pad 4 over the protective elements (the resistanceelements 38 (R1) and 39 (R2) in the resistance element forming regions22 and 26 and the diode elements D1 and D2 in the diode element formingregions 23 and 25) and the nMISFET forming region 21 and the pMISFETforming region 27, i.e., over the input/output circuit 11 (I/O cell)eliminates the need for increasing a chip dimension owing to the bondingpad 4, which permits reducing the planar dimension of the semiconductordevice 1.

Unlike the present embodiment, when the grounding wiring 7 and the powersupply wiring 8 are formed by a metallic layer on the same layer as thebonding pad 4, making a detour around the input/output circuit 11 andproviding the grounding wiring and the power supply wiring narrow thewidth of wiring of a power supply wiring to decrease current density.Alternatively, widening the width of wiring of a power supply wiring tokeep current density results in increase in planar dimension of thesemiconductor device.

On the other hand, in the present embodiment, the grounding wiring 7 andthe power supply wiring 8 are arranged under the bonding pad 4 and overthe protective elements and the nMISFET and pMISFET forming regions 21and 27 (i.e., over the input/output circuit 11 (I/O cell), which allowswidening the wiring width of the grounding wiring 7 and the power supplywiring 8 and accurately passing an EDS surge inputted into the bondingpad 4 through the grounding wiring 7 and the power supply wiring 8.Furthermore, providing the pulling-out region 24 between the groundingwiring 7 and the power supply wiring 8 permits readily realizing thegrounding wiring 7 and the power supply wiring 8 that are wide in width.

Second Embodiment

FIG. 11 is a top view showing the principal elements of thesemiconductor device according to the present embodiment and correspondsto FIG. 4 in the first embodiment. As is the case with FIG. 4 in thefirst embodiment, FIG. 10 shows the periphery of the semiconductordevice and planar layout of the input/output circuit 11, the circuit 15,the power supply wiring 5, the grounding wiring 6 and the bonding pad 4but omits the illustration of the grounding wiring 7 and the powersupply wiring 8.

In the above first embodiment, the bonding pads 4 are staggered. In thepresent embodiment, a plurality of bonding pads 4 are straight arrangedin one row instead of being staggered. That is, all the bonding pads 4configured in the same manner as the first bonding pad 4 a in the firstembodiment correspond to the present embodiment. As another embodiment,all bonding pads 4 may be configured in the same manner as the secondbonding pad 4 b in the first embodiment. Other configurations of thesemiconductor device in the present embodiment are substantially thesame as the semiconductor device 1 in the first embodiment, so thatduplicated description is omitted thereof.

Effects can be similarly obtained also in the present embodiment exceptfor those related to staggered arrangement of the bonding pads 4 in thefirst embodiment. For example, the wiring 53 is pulled out over thegrounding wiring 7 and the power supply wiring 8 in the pulling-outregion 24 between the grounding wiring 7 and the power supply wiring 8to be connected to the conductive layer 51, which permits the bondingpads 4 to be arranged over the input/output circuit 11 (I/O cell),thereby allowing the semiconductor device 1 to be downsized.

Third Embodiment

FIGS. 12 and 13 are top views showing the principal elements of thesemiconductor device according to the present embodiment and correspondto FIGS. 2 and 5 in the above first embodiment respectively. FIGS. 12and 13 show the same region. As is the case with FIG. 2 in the firstembodiment, FIG. 12 shows the periphery of the semiconductor device andplanar layout of the input/output circuit 11 a and circuit 15. FIG. 13shows the planar layout of the input/output circuit 11 a, the powersupply wiring 5, the grounding wiring 6, the grounding wiring 7, thepower supply wiring 8, the conductive layer 51 and the bonding pad 4 c.FIGS. 14 and 15 are cross sections showing the principal elements of thesemiconductor device according to the present embodiment. A crosssection along line E-E in FIG. 12 substantially corresponds to FIG. 14.A cross section along line F-F in FIG. 12 substantially corresponds toFIG. 15. FIG. 16 is a circuit diagram (equivalent circuit) showing aninput/output circuit 11 a.

The bonding pad 4 c and the input/output circuit 11 a are illustrated inFIGS. 12 to 16. The bonding pad 4 c, among a plurality of the bondingpads 4 provided along the periphery of main surface the semiconductordevice as shown in FIG. 1, is used for supplying power supply voltage(power supply electric potential) to the power supply wiring 8. Theinput/output circuit 11 a is a circuit constituting an I/O power supplycell and the circuit configuration thereof is illustrated in FIG. 16. Ascan be seen from the circuit diagram in FIG. 16, the input/outputcircuit 11 a has n-channel MISFETs Qn3 and Qn4 for protection(hereinafter referred to as “nMISFET Qn3” and “nMISFET Qn4”) and thediodes D3 and D4 for protection. The bonding pad 4 c is electricallyconnected directly to the power supply wiring 8 and electricallyconnected to the grounding wiring 7 through nMISFETs Qn3 and Qn4 and thediodes D3 and D4 as protective elements.

Specifically, the bonding pad 4 c is electrically connected to thegrounding wiring 7 through the diode D3 and electrically connected tothe grounding wiring 7 through the diode D4. That is, the bonding pad 4c is electrically connected to one of the anode or the cathode of thediode D3, and the other of the anode or the cathode of the diode D3 iselectrically connected to the grounding wiring 7. In addition, thebonding pad 4 c is electrically connected to one of the anode or thecathode of the diode D4, and the other of the anode or the cathode ofthe diode D4 is electrically connected to the grounding wiring 7.Furthermore, the bonding pad 4 c is electrically connected to one of thesource or the drain of the nMISFET Qn3, and the other of the source orthe drain of the nMISFET Qn3 and the gate electrode thereof areelectrically connected to the grounding wiring 7. In addition, thebonding pad 4 c is electrically connected to one of the source or thedrain of the nMISFET Qn4, and the other of the source or the drain ofthe nMISFET Qn4 and the gate electrode thereof are electricallyconnected to the grounding wiring 7.

The nMISFETs Qn3 and Qn4 and the diodes D3 and D4 constituting theinput/output circuit 11 a function as protective elements. For instance,when a surge (ESD surge) is inputted into the bonding pad 4 c, it can bepassed to the grounding wiring 7 through the nMISFETs Qn3 and Qn4 andthe diodes D3 and D4. Thus, the input/output circuit 11 a functions as aprotective circuit (for I/O power supply cell).

As shown in FIGS. 12 to 15, an nMISFET forming region 21 a, a diodeelement forming region 23 a, an pulling-out region 24, a diode elementforming region 25 a and an nMISFET forming region 27 a are arranged atthe periphery of the main surface 2 of the semiconductor device 1 inthis order in the direction from the inside (the inner side of the mainsurface 2 of the semiconductor device 1) to the periphery (the side ofthe end 2 a of main surface 2 of the semiconductor device 1) i.e., inthe X-direction. The nMISFET forming region 21 a is a region where anMISFET corresponding to the nMISFET Qn3 is formed and the diode elementforming region 23 a is a region where a diode element corresponding tothe diode element D3 is formed. The diode element forming region 25 a isa region where a diode element corresponding to the diode element D4 isformed. The nMISFET forming region 27 a is a region where an MISFETcorresponding to the nMISFET Qn4 is formed. Therefore, the input/outputcircuit 11 a is formed by the nMISFET forming region 21 a (nMISFET Qn3),the diode element forming region 23 a (the diode element D3), the diodeelement forming region 25 a (the diode element D4) and the nMISFETforming region 27 a (nMISFET Qn4). The input/output circuit 11 a isprovided in the vicinity of the bonding pad 4 c.

The configuration of periphery of the semiconductor device (around thebonding pad 4 c) according to the present embodiment is described infurther detail with reference to FIGS. 12 to 15.

In the present embodiment, as shown in FIGS. 14 and 15, a p-type well 32and an n-type well 33 are formed on the main surface of thesemiconductor substrate 30. The p-type well 32 is formed in the regiontwo-dimensionally including the nMISFET forming regions 21 a and 27 a.The n-type well 33 is formed in the region two-dimensionally includingthe diode element forming regions 23 a and 25 a.

The nMISFET forming regions 21 a and 27 a are substantially the same inconfiguration. The nMISFET forming regions 21 a and 27 a are similar inconfiguration to the nMISFET forming region 21 in the first embodiment.That is, in the nMISFET forming regions 21 a and 27 a, a plurality ofgate electrodes 61 are so formed as to extend in the X-direction througha gate insulating film (not shown) over the p-type well 32, and then-type semiconductor regions (n-type diffused layer) 62 as a source anda drain are formed in the regions on both sides of the gate electrodes61. Incidentally, among the n-type semiconductor regions 62, the n-typesemiconductor region 62 a functions as one of a source or a drain andthe n-type semiconductor region 62 b functions as the other of a sourceor a drain. The gate electrodes 61, the gate insulating film (not shown)and the n-type semiconductor region 62 (62 a and 62 b) as a source and adrain under the gate electrodes 61 form the n-type MISFET constitutingthe nMISFETs Qn3 and Qn4 in the nMISFET forming regions 21 a and 27 a.

The diode element forming regions 23 a and 25 a are substantially thesame in configuration. The diode element forming regions 23 a and 25 aare similar in configuration to the diode element forming regions 23 and25 in the first embodiment. That is, in the diode element formingregions 23 a and 25 a, the n-type semiconductor region (n-type diffusedlayer) 63 and the p-type semiconductor region (p-type diffused layer) 64are two-dimensionally formed adjacently to each other on the n-type well33. For example, the n-type semiconductor region 63 and the p-typesemiconductor region 64 extending in the X-direction are alternatelyarranged in the Y-direction. The diode element (the diode elementconstituting the diode elements D3 and D4) is formed by a PN junctionbetween the n-type semiconductor region 63 and the p-type semiconductorregion 64 in the diode element forming regions 23 a and 25 a.Incidentally, the p-type semiconductor region 64 may be constructed of apart of the n-type well 33.

P-type semiconductor regions (p-type diffused layer) 65 as a guard ringare formed in the nMISFET forming regions 21 a and 27 a, and n-typesemiconductor regions (n-type diffused layer) 66 as a guard ring areformed in the diode element forming regions 23 a and 25 a. The p-typesemiconductor regions 65 may be constructed of a part of the p-type well32 and the n-type semiconductor regions 66 may be constructed of a partof the n-type well 33.

FIG. 14 shows a cross section (in the X-direction) passing through then-type semiconductor regions 62 a in the nMISFET forming regions 21 aand 27 a and the n-type semiconductor regions 63 in the diode elementforming regions 23 a and 25 a. In addition, FIG. 15 shows a crosssection (in the X-direction) passing through the n-type semiconductorregions 62 b in the nMISFET forming regions 21 a and 27 a and the n-typesemiconductor regions 64 in the diode element forming regions 23 a and25 a.

As is the case with the first embodiment, a multilayer wiring structureformed of a plurality of interlayer insulating films (integrallyillustrated as the insulating film 50) and of wiring layers (wirings M1to M7) is laid over the semiconductor substrate 30. Also, as is the casewith the first embodiment, the grounding wiring 7 and the power supplywiring 8 are formed by the fourth, fifth, sixth and seventh layerwirings M4, M5, M6 and M7 and the plugs PG connecting between thewirings M4, M5, M6 and M7. Furthermore, the grounding wiring 7 and thepower supply wiring 8 extend in the Y-direction along the periphery ofthe semiconductor device to pass through over the protective elements(the nMISFET forming regions 21 a and 27 a and the diode element formingregions 23 a and 25 a) constituting the input/output circuit 11 a. Inthis case, the grounding wiring 7 passes through over the nMISFETforming region 21 a and the diode element forming region 23 a. The powersupply wiring 8 passes through over the diode element forming region 25a and the nMISFET forming region 27 a.

As is the case with the bonding pad 4 in the first embodiment, theconductive layer 51 being the uppermost metallic layer is exposed fromthe opening 52 of the protective film (illustrated as the insulatingfilm 50) to form the bonding pad 4 c. The bonding pad 4 c is integrallyformed with the conductive layer 51, and a part of the conductive layer51 is the bonding pad 4 c. The conductive layer 51 may be regarded as aconductive layer positioned over the grounding wiring 7 and the powersupply wiring 8 and electrically connected to the bonding pad 4 c.

The bonding pad 4 c is arranged over the protective elements (thenMISFET forming regions 21 a and 27 a and the diode element formingregions 23 a and 25 a) constituting the input/output circuit 11 a. InFIGS. 14 and 15, the bonding pad 4 c is arranged over the diode elementforming region 25 a and the nMISFET forming region 27 a, however, asanother embodiment, the bonding pad 4 c may be arranged over the nMISFETforming region 21 a and the diode element forming region 23 a by forminga pattern of the conductive layer 51 as in the case of the secondbonding pad 4 b in the first embodiment.

The conductive layer 51 for the bonding pad 4 c is electricallyconnected to a wiring 53 a under the grounding wiring 7 and the powersupply wiring 8 through the pulling-out region 24. The wiring 53 a, asshown in FIG. 14, is connected to the power supply wiring 8 through theplugs PG and electrically connected to the n-type semiconductor region63 in the diode element forming regions 23 a and 25 a and the n-typesemiconductor region 62 a in the nMISFET forming regions 21 a and 27 athrough the plugs PG. The wiring 53 a correspond to the wiring 53 in theabove first embodiment. As shown in FIG. 15, the p-type semiconductorregion 64 in the diode element forming regions 23 a and 25 a and then-type semiconductor region 62 b in the nMISFET forming regions 21 a and27 a are electrically connected to the wiring 56 a through the plugs PG.The wiring 56 a is electrically connected to the grounding wiring 7 overthe wiring 56 a through the plugs PG. The wiring 56 a corresponds to thewirings 55 and 56 in the first embodiment. Wirings 53 a and 56 a arewirings positioned under the conductive layer 51, the grounding wiring 7and the power supply wiring 8, and include the first, second and thirdlayer wirings M1, M2 and M3 and the plugs PG. The wirings 53 a and 56 aare on the same layer, but different from each other. The circuitconfiguration shown in FIG. 16 is thus realized.

The wiring 53 a is electrically connected to the protective elements(MISFET Qn3 and Qn4 in the nMISFET forming regions 21 a and 27 a and thediode elements D3 and D4 in the diode element forming regions 23 a and25 a) formed over the semiconductor substrate 30 through the plugs PG.The wiring 53 a positioned under the grounding wiring 7 and the powersupply wiring 8 needs to be electrically connected to the bonding pad 4c. As is the case with the first embodiment, also in the presentembodiment, the pulling-out region 24 is provided between the groundingwiring 7 and the power supply wiring 8, and the wiring 53 a is pulledout over the grounding wiring 7 and the power supply wiring 8 to beconnected to the conductive layer 51 in the pulling-out region 24.

In the present embodiment, the nMISFET of a protective elementconstituting the input/output circuit 11 a as a protective circuit isdivided and formed into the nMISFET forming regions 21 a and 27 a andthe diode element of a protective element constituting the input/outputcircuit 11 a is divided and formed into two diode element formingregions 23 a and 25 a. The pulling-out region 24 is arranged between agroup including the nMISFET forming region 21 a and the diode elementforming region 23 a and a group including the diode element formingregion 25 a and the nMISFET forming region 27 a. The wiring 53 a ispulled out over the grounding wiring 7 and the power supply wiring 8 tobe electrically connected to the conductive layer 51. Furthermore, itmay be regarded that the pulling-out region 24 is arranged between thenMISFET forming region 21 a and the nMISFET forming region 27 a.

In the present embodiment, such a configuration enables providingsubstantially the same effect as in the first embodiment.

For example, as is the case with the first embodiment, also in thepresent embodiment, the pulling-out region 24 is provided between thegrounding wiring 7 and the power supply wiring 8; and the wiring 53 a ispulled out over the grounding wiring 7 and the power supply wiring 8 tobe connected to the conductive layer 51, so that the bonding pad 4 c canbe arranged further inside, allowing the planar dimension of thesemiconductor device (a semiconductor chip) to be reduced, which permitsdownsizing the semiconductor device.

In addition, the protective elements (nMISFET and diode element)constituting the input/output circuit 11 a are divided into tworespective regions to arrange the pulling-out region 24 between thenMISFET forming regions 21 a and 27 a and between the diode elementforming regions 23 a and 25 a. The wiring 53 a is pulled out over thegrounding wiring 7 and the power supply wiring 8 to be connected to theconductive layer 51. Particularly, the nMISFET forming region occupyinga larger area than the diode element forming regions 23 a and 25 a isdivided into two regions (i.e., the nMISFET forming region 21 a and 27a) and the pulling-out region 24 is arranged between the nMISFET formingregions 21 a and 27 a. This enables the pulling-out region 24 to bearranged around the center of the region for forming the input/outputcircuit 11 a, which permits the bonding pad 4 c to be arranged at aposition near the center of the input/output circuit 11 a. That is tosay, even when the bonding pad 4 c is arranged outside the pulling-outregion 24 (on the side of end of the semiconductor device 1), thebonding pad 4 can be arranged further inside by the position where thepulling-out region 24 is positioned further inside than the nMISFETforming region 27 a. This allows the semiconductor device to be reducedin planar dimension to downsize the semiconductor device.

Fourth Embodiment

FIGS. 17 to 20 are top views showing the principal elements of thesemiconductor device according to the present embodiment. FIGS. 17 to 20correspond to FIGS. 2 to 4 in the first embodiment respectively. FIGS.17 and 20 show the same region. Similarly to FIG. 2 in the firstembodiment, FIG. 17 shows the periphery of the semiconductor device andplanar layout of the input/output circuits 11 b and 11 c and circuit 15.FIG. 18 corresponds to a figure in which the power supply wiring 5, thegrounding wiring 6, the grounding wiring 7 and the power supply wiring 8are added to FIG. 17. FIG. 19 corresponds to a figure in which the powersupply wiring 5, the grounding wiring 6, the conductive layer 51 and thebonding pad 4 are added to FIG. 17. FIG. 20 corresponds to a figure inwhich the power supply wiring 5, the grounding wiring 6 and the wirings71 and 72 are added to FIG. 17. FIGS. 21 and 22 are cross sectionsshowing the principal elements of the semiconductor device according tothe present embodiment. A cross section along line G-G in FIG. 17substantially corresponds to FIG. 17. A cross section along line H-H inFIG. 17 substantially corresponds to FIG. 22. FIG. 23 is a circuitdiagram (equivalent circuit) showing an input/output circuit 11 b FIG.24 is a circuit diagram (equivalent circuit) showing an input/outputcircuit 11 c.

Bonding pads 4 d and 4 e and the input/output circuits 11 b and 11 c areshown in FIGS. 17 to 24. The bonding pad 4 d, among a plurality of thebonding pads 4 provided along the periphery of main surface of thesemiconductor device shown in FIG. 1, is for supplying power supplyvoltage (power supply electric potential) to the power supply wiring 5.The bonding pad 4 e, among a plurality of the bonding pads 4 providedalong the periphery of main surface of the semiconductor device shown inFIG. 1, is for supplying grounding voltage (grounding electricpotential) to the grounding wiring 6. The input/output circuit 11 b isfor constituting a core power-supplying cell and is configured as shownin FIG. 23. The input/output circuit 11 c is for constituting a coreGND-supplying cell and is configured as shown in FIG. 24.

That is to say, as can be seen from FIG. 23, the input/output circuit 11b has protective n-channel MISFETs Qn5 and Qn6 (hereinafter referred toas “nMISFET Qn5” and “nMISFET Qn6”) and protective diodes D5 and D6. Thebonding pad 4 d is electrically and directly connected to the powersupply wiring 5 and electrically connected to the grounding wiring 6through nMISFETs Qn5 and Qn6 and the diodes D5 and D6 acting asprotective elements.

Specifically, the bonding pad 4 d is electrically connected to thegrounding wiring 6 through the diode element D5 and to the groundingwiring 6 through the diode element D6. In other words, the bonding pad 4d is electrically connected to one of the anode or the cathode of thediode D5 and the other of the anode or the cathode of the diode D5 iselectrically connected to the grounding wiring 6. In addition, thebonding pad 4 d is electrically connected to one of the anode or thecathode of the diode D6 and the other of the anode or the cathode of thediode D6 is electrically connected to the grounding wiring 6.Furthermore, the bonding pad 4 d is electrically connected to one of thesource or the drain of the nMISFET Qn5 and the other of the source orthe drain of the nMISFET Qn5 is electrically connected to the groundingwiring 6. The bonding pad 4 d is electrically connected to one of thesource or the drain of the nMISFET Qn6 and the other of the source orthe drain of the nMISFET Qn6 is electrically connected to the groundingwiring 6.

As can be seen from FIG. 24, the input/output circuit 11 c hasprotective n-channel MISFETs Qn7 and Qn8 (hereinafter referred to as“nMISFET Qn7” and “nMISFET Qn8”) and protective diodes D7 and D8. Thebonding pad 4 e is electrically and directly connected to the groundingwiring 6 and electrically connected to the power supply wiring 5 throughnMISFETs Qn7 and Qn8 and the diodes D7 and D8 acting as protectiveelements.

Specifically, the bonding pad 4 e is electrically connected to the powersupply wiring 5 through the diode element D7 and to the power supplywiring 5 through the diode element D8. In other words, the bonding pad 4e is electrically connected to one of the anode or the cathode of thediode D7 and the other of the anode or the cathode of the diode D7 iselectrically connected to the power supply wiring 5. In addition, thebonding pad 4 e is electrically connected to one of the anode or thecathode of the diode D8 and the other of the anode or the cathode of thediode D8 is electrically connected to the power supply wiring 5.Furthermore, the bonding pad 4 e is electrically connected to one of thesource or the drain of the nMISFET Qn7 and the other of the source orthe drain of the nMISFET Qn7 is electrically connected to the powersupply wiring 5. The bonding pad 4 e is electrically connected to one ofthe source or the drain of the nMISFET Qn8 and the other of the sourceor the drain of the nMISFET Qn8 is electrically connected to the powersupply wiring 5.

The nMISFETs Qn5, Qn6, Qn7 and Qn8 and the diodes D5, D6, D7 and D8constituting the input/output circuits 11 b and 11 c are capable offunctioning as elements for protection (protective element). When asurge (ESD surge) or the like, for example, is inputted into the bondingpads 4 d, it can be passed to the grounding wiring 6 through thenMISFETs Qn5 and Qp6 and the diodes D5 and D6. When a surge (ESD surge)or the like, for example, is inputted into the bonding pads 4 e, it canalso be passed to the power supply wiring 5 through the nMISFETs Qn7 andQp8 and the diodes D7 and D8. Thus, the input/output circuits 11 b and11 c are capable of functioning as protective circuits for the corepower-supplying cell and the core CND-supplying cell.

As shown in FIGS. 17 to 22, in the input/output circuit 11 b, an nMISFETforming region 21 b, a diode element forming region 23 b, a pulling-outregion 24, a diode element forming region 25 b and an nMISFET formingregion 27 b are arranged at the periphery of the main surface 2 of thesemiconductor device 1 in this order in the direction from the inside(the inner side of the main surface 2 of the semiconductor device 1) tothe periphery (the side of the end 2 a of main surface 2 of thesemiconductor device 1), i.e., in the X-direction. The region forforming the input/output circuit 11 c is also the same in configurationas that for forming the input/output circuit 11 b. That is to say, inthe input/output circuit 11 c, an nMISFET forming region 21 c, a diodeelement forming region 23 c, a pulling-out region 24, a diode elementforming region 25 c and an nMISFET forming region 27 c are arranged atthe periphery of the main surface 2 of the semiconductor device 1 inthis order in the direction from the inside (the inner side of the mainsurface 2 of the semiconductor device 1) to the periphery (the side ofthe end 2 a of main surface 2 of the semiconductor device 1), i.e., inthe X-direction.

The nMISFET forming region 21 b is a region where an MISFETcorresponding to the nMISFET Qn5 is formed and the diode element formingregion 23 b is a region where a diode element corresponding to the diodeelement D5 is formed. The diode element forming region 25 b is a regionwhere a diode element corresponding to the diode element D6 is formed.The nMISFET forming region 27 b is a region where a MISFET correspondingto the nMISFET Qn6 is formed. Therefore, the input/output circuit 11 bis formed by the nMISFET forming region 21 b (nMISFET Qn5), the diodeelement forming region 23 b (the diode element D5), the diode elementforming region 25 b (the diode element D6) and the nMISFET formingregion 27 b (nMISFET Qn6). The input/output circuit 11 b is provided inthe vicinity of the bonding pad 4 d.

The nMISFET forming region 21 c is a region where an MISFETcorresponding to the nMISFET Qn7 is formed and the diode element formingregion 23 c is a region where a diode element corresponding to the diodeelement D7 is formed. The diode element forming region 25 c is a regionwhere a diode element corresponding to the diode element D8 is formed.The nMISFET forming region 27 c is a region where a MISFET correspondingto the nMISFET Qn8 is formed. Therefore, the input/output circuit 11 cis formed by the nMISFET forming region 21 c (nMISFET Qn7), the diodeelement forming region 23 c (the diode element D7), the diode elementforming region 25 c (the diode element D8) and the nMISFET formingregion 27 c (nMISFET Qn8). The input/output circuit 11 c is provided inthe vicinity of the bonding pad 4 e.

The configuration of periphery of the semiconductor device (around thebonding pads 4 d and 4 e) according to the present embodiment isdescribed in further detail with reference to FIGS. 17 to 22.

In the present embodiment, the regions for forming the input/outputcircuits 27 b and 27 c are adjacently arranged to each other in theY-direction. The bonding pads 4 d and 4 e are also adjacently arrangedto each other.

Each of the regions for forming the input/output circuits 27 b and 27 cis substantially the same in configuration as that for forming theinput/output circuit 11 a in the third embodiment except for wirings.That is to say, each of the nMISFET forming regions 21 b and 21 c issubstantially the same in configuration as the above nMISFET formingregion 21 a except for wirings. Each of the diode element formingregions 23 b and 23 c is substantially the same in configuration as theabove diode element forming region 23 a except for wirings. Each of thediode element forming regions 25 b and 25 c is substantially the same inconfiguration as the above diode element forming region 25 a except forwirings. Each of the pMISFET forming regions 27 b and 27 c issubstantially the same in configuration as the above nMISFET formingregion 27 a except for wirings. For these reasons, description isomitted herein on the configuration of the nMISFET forming regions 21 b,21 c, 27 b and 27 c and the diode element forming regions 23 b, 23 c, 25b and 25 c.

FIG. 21 shows a cross section (in the X-direction) passing through then-type semiconductor regions 62 a in the nMISFET forming regions 21 band 27 b and the n-type semiconductor regions 63 in the diode elementforming regions 23 b and 25 b. In addition, FIG. 22 shows a crosssection (in the X-direction) passing through the n-type semiconductorregions 62 a in the nMISFET forming regions 21 c and 27 c and the p-typesemiconductor region 64 in the diode element forming regions 23 c and 25c.

Also, in the present embodiment, as is the case with the first to thirdembodiments, a multilayer wiring structure formed of a plurality ofinterlayer insulating films (integrally illustrated as the insulatingfilm 50) and of wiring layers (wirings M1 to M7) is laid over thesemiconductor substrate 30.

In the present embodiment, the grounding wiring 7 and the power supplywiring 8 are formed by the sixth and seventh layer wirings M6 and M7 andthe plugs PG connecting between the wirings M6 and M7. Furthermore, thegrounding wiring 7 and the power supply wiring 8 extend in theY-direction along the periphery of the semiconductor device to passthrough over the protective elements (the nMISFET forming regions 21 b,21 c, 27 b and 27 c and the diode element forming regions 23 b, 23 c, 25b and 25 c) constituting the input/output circuits 11 b and 11 c. Where,the grounding wiring 7 passes through over the nMISFET forming regions21 a and 21 c and the diode element forming regions 23 b and 23 c. Thepower supply wiring 8 passes through over the diode element formingregions 25 b and 25 c and the nMISFET forming regions 27 b and 27 c.

In the present embodiment, furthermore, a wiring 71 including the fourthand fifth layer wirings M4 and M5 is provided under the grounding wiring7. A wiring 72 including the fourth and fifth layer wirings M4 and M5 isprovided under the power supply wiring 8. The wiring 71 extends overfrom the nMISFET forming region 21 b and the diode element formingregion 23 b in the input/output circuit 11 b to the nMISFET formingregion 21 c and the diode element forming region 23 c in theinput/output circuit 11 c in the Y-direction. The wiring 72 extends overfrom the diode element forming region 25 b and the nMISFET formingregion 27 b in the input/output circuit 11 b to the diode elementforming region 25 c and the nMISFET forming region 27 c in theinput/output circuit 11 c in the Y-direction.

The power supply wiring 5 and the grounding wiring 6 are formed by thefourth, fifth, sixth and seventh layer wirings M4, M5, M6 and M7 and theplugs PG connecting between the wirings M4, M5, M6 and M7. The powersupply wiring 5 and the grounding wiring 6 extend in the Y-directionfurther inside than the grounding wiring 7 and the power supply wiring8, i.e., further inside than the input/output circuits 11 b and 11 c.

The conductive layer 51 that is the uppermost metallic layer is exposedfrom the opening 52 of the protective film (illustrated as theinsulating film 50) to form the bonding pads 4 c and 4 e, as is the casewith the bonding pad 4 in the first embodiment. The bonding pad 4 d isintegrally formed with the conductive layer 51, and a part of theconductive layer 51 is the bonding pad 4 d. In additions, the bondingpad 4 e is integrally formed with the conductive layer 51, and a part ofthe conductive layer 51 is the bonding pad 4 e. The conductive layer 51for the bonding pad 4 d and the conductive layer 51 for the bonding pad4 e are on the same layer, however, are differently patterned conductivelayers separated from each other. The power supply wiring 51 may beregarded as a conductive layer positioned over the grounding wiring 7and the power supply wiring 8 and electrically connected to the bondingpads 4 d and 4 e. In addition, the pattern of the conductive layer 51may be used also for the eight layer wiring (uppermost layer wiring) toform the power supply wiring 5 and the grounding wiring 6 by the wiringsM4, M5, M6 and M7 and the conductive layer 51.

The bonding pad 4 d is arranged over the protective element (the nMISFETforming regions 21 b and 27 b and the diode element forming regions 23 band 25 b) constituting the input/output circuit 11 b. The bonding pad 4e is arranged over the protective element (the nMISFET forming regions21 c and 27 c and the diode element forming regions 23 c and 25 c)constituting the input/output circuit 11 c.

A plurality of the bonding pads 4 including the bonding pads 4 d and 4 emay be staggered. At this point, the bonding pads 4 d and 4 e areshifted in position in the Y-direction. One of the bonding pads 4 d and4 e (where, the bonding pad 4 e) is arranged on the side near the end ofthe semiconductor device as in the case of the first bonding pad 4 a,and the other of the bonding pads 4 d and 4 e (where, the bonding pad 4d) is arranged further inside than the bonding pad 4 e as in the case ofthe first bonding pad 4 b.

For that reason, as illustrated in the figures, the bonding pad 4 d isarranged over the nMISFET forming region 21 b and the diode elementforming region 23 b and the bonding pad 4 e is arranged over the diodeelement forming region 25 c and the nMISFET forming region 27 c. Asanother embodiment, the bonding pad 4 d may be arranged over the diodeelement forming region 25 b and the nMISFET forming region 27 b and thebonding pad 4 e may be arranged over the nMISFET forming region 21 c andthe diode element forming region 23 c.

The conductive layer 51 for the bonding pad 4 d extends from over thepulling-out region 24 to over the power supply wiring 5 while passingthrough over the diode element forming region 23 b and the nMISFETforming region 21 b and is electrically connected to the power supplywiring 5 under the conductive layer 51 through the plugs PG. Theconductive layer 51 for the bonding pad 4 d is electrically connected tothe wiring 53 b positioned under the conductive layer 51 through thepulling-out region 24. The wiring 53 b is a wiring positioned under thepower supply wiring 5, the grounding wiring 6, the grounding wiring 7,the power supply wiring 8, the conductive layer 51 and the wirings 71and 72, and includes, for example, the first, second and third layerwirings M1, M2 and M3 and the plugs PG. As shown in FIG. 21, the wiring53 b extends from the region for forming the input/output circuit 11 bto under the power supply wiring 5 and is electrically connected to thepower supply wiring 5 positioned over the wiring 53 b through the plugsPG and to the wiring 72 positioned over the wiring 53 b through theplugs PG. The wiring 53 b is further electrically connected to then-type semiconductor regions 63 in the diode element forming regions 23b and 25 b and the n-type semiconductor regions 62 a in the nMISFETforming regions 21 b and 27 b under the wiring 53 b through the plugsPG.

The conductive layer 51 for the bonding pad 4 e extends from over thenMISFET forming region 27 c to over the grounding wiring 6 while passingthe diode element forming region 25 c, the pulling-out region 24, thediode element forming region 23 c and the nMISFET forming region 21 cand is electrically connected to the power supply wiring 6 under theconductive layer 51 through the plugs PG. The conductive layer 51 forthe bonding pad 4 e is electrically connected to the wiring 53 cpositioned under the conductive layer 51 through the pulling-out region24. The wiring 53 c is a wiring positioned under the power supply wiring5, the grounding wiring 6, the grounding wiring 7, the power supplywiring 8, the conductive layer 51 and the wirings 71 and 72, andincludes, for example, the first, second and third layer wirings M1, M2and M3 and the plugs PG. As shown in FIG. 22, the wiring 53 c extendsfrom the region for forming the input/output circuit 11 c to under thegrounding wiring 6 and is electrically connected to the power supplywiring 6 positioned over the wiring 53 c through the plugs PG and to thewiring 71 positioned over the wiring 53 c through the plugs PG. Thewiring 53 c is further electrically connected to the p-typesemiconductor regions 64 in the diode element forming regions 23 c and25 c and the n-type semiconductor regions 62 a in the nMISFET formingregions 21 c and 27 c under the wiring 53 c through the plugs PG.

The wirings 53 b and 53 c correspond to the wirings 53 and 53 a in thefirst to third embodiments. Though an illustration is not provided here,as is the case with the third embodiment, the p-type semiconductorregions 64 in the diode element forming regions 23 b and 25 b and then-type semiconductor regions 62 b in the nMISFET forming regions 21 band 27 b are electrically connected to a wiring through the plugs PG orthe like, and the wiring is further electrically connected to the wiring71 positioned further over the wiring through the plugs PG. Furthermore,though an illustration is not provided either, the n-type semiconductorregions 63 in the diode element forming regions 23 c and 25 c and then-type semiconductor regions 62 b in the nMISFET forming regions 21 cand 27 c are electrically connected to a wiring through the plugs PG,and the wiring is further electrically connected to the wiring 72positioned further over the wiring through the plugs PG. The circuitconfigurations shown in FIGS. 23 and 24 are thus realized.

The wiring 53 b is electrically connected to the protective elements(MISFET Qn5 and Qn6 in the nMISFET forming regions 21 b and 27 b and thediode elements D5 and D6 in the diode element forming regions 23 b and25 b) formed on the semiconductor substrate 30 through the plugs PG. Inaddition, the wiring 53 c is electrically connected to the protectiveelements (MISFETs Qn7 and Qn8 in the nMISFET forming regions 21 c and 27c and the diode elements D7 and D8 in the diode element forming regions23 c and 25 c) formed on the semiconductor substrate 30 through theplugs PG. The wirings 53 b and 53 c are positioned under the groundingwiring 7, the power supply wiring 8 and the wirings 71 and 72, and needto be electrically connected to the bonding pads 4 d and 4 erespectively. As is the case with the first embodiment, also in thepresent embodiment, the pulling-out region 24 is provided between thegrounding wiring 7 and the power supply wiring 8, and the wirings 53 band 53 c are pulled out over the grounding wiring 7 and the power supplywiring 8 to be connected to the conductive layer 51 in the pulling-outregion 24.

In the present embodiment, the nMISFET that is a protective elementconstituting the input/output circuit 11 a as a protective circuit isdivided and formed into two nMISFET forming regions 21 b and 27 b andthe diode element that is a protective element constituting theinput/output circuit 11 a is divided and formed into two diode elementforming regions 23 b and 25 b. The pulling-out region 24 is arrangedbetween a group including the nMISFET forming region 21 b and the diodeelement forming region 23 b and a group including the diode elementforming region 25 b and the nMISFET forming region 27 b, and the wiring53 b is pulled out there over the wirings 71 and 72, the groundingwiring 7 and the power supply wiring 8 to be electrically connected tothe conductive layer 51. In addition, the nMISFET that is a protectiveelement constituting the input/output circuit 11 c as a protectivecircuit is divided and formed into two nMISFET forming regions 21 c and27 c and the diode element that is a protective element constituting theinput/output circuit 11 c is divided and formed into two diode elementforming regions 23 c and 25 c. The pulling-out region 24 is arrangedbetween a group including the nMISFET forming region 21 c and the diodeelement forming region 23 c and a group including the diode elementforming region 25 c and the nMISFET forming region 27 c, and the wiring53 c is pulled out there over the wirings 71 and 72, the power supplywiring 5, the grounding wiring 6, the grounding wiring 7 and the powersupply wiring 8 to be electrically connected to the conductive layer 51.It may be regarded that The pulling-out region 24 is arranged betweenthe nMISFET forming regions 21 b and 27 b and that the pulling-outregion 24 is arranged between the nMISFET forming regions 21 c and 27 c.

Such a configuration in the present embodiment enables providingsubstantially the same effect as the third embodiment.

Also in the present embodiment, as is the case with the firstembodiment, for example, the pulling-out region 24 is provided betweenthe grounding wiring 7 and the power supply wiring 8, and the wirings 53b and 53 c are pulled out there over the wirings 71 and 72, thegrounding wiring 7 and the power supply wiring 8 to be connected to theconductive layer 51, so that the bonding pads 4 d and 4 c can bearranged further inside, allowing the planar dimension of thesemiconductor device (a semiconductor chip) to be reduced to downsizethe semiconductor device.

In addition, each protective element (nMISFET and diode element)constituting the input/output circuits 11 ba and 11 c is divided intotwo regions to arrange the pulling-out region 24: between the nMISFETforming regions 21 b and 27 b and between the diode element formingregions 23 b and 25 b; and between the nMISFET forming regions 21 c and27 c and between the diode element forming regions 23 c and 25 c. Thewirings 53 b and 53 c are pulled out there to be connected to theconductive layer 51. Particularly, the nMISFET forming region occupyinga larger area than the diode element forming regions 23 b, 23 c, 25 band 25 c is divided into two regions, between which and the pulling-outregion 24 is arranged. That is, in the input/output circuit 11 b, theregion for forming the nMISFET as a protective element is divided intothe nMISFET forming regions 21 b and 27 b, between which the pulling-outregion 24 is arranged. In the input/output circuit 11 c, the region forforming the nMISFET as a protective element is divided into the nMISFETforming regions 21 c and 27 c, between which the pulling-out region 24is arranged. This enables the pulling-out region 24 to be arrangedaround the center of the regions for forming the input/output circuits11 b and 11 c, which permits the bonding pads 4 d and 4 c to be arrangedat a position near the center of the regions for forming theinput/output circuits 11 b and 11 c. For example, even when the bondingpad 4 e is arranged outside the pulling-out region 24 (on the side ofend of the semiconductor device 1), the bonding pad 4 e can be arrangedfurther inside by the position where the pulling-out region 24 ispositioned further inside than the pMISFET forming region 27 c, therebyallowing the planar dimension of the semiconductor device to be reducedto downsize the semiconductor device.

Furthermore, the present embodiment provides the following effect.

Since the bonding pad 4 d is electrically connected to the power supplywiring 5, the bonding pad 4 d is capable of supplying power supplyelectric potential (power supply voltage) to the power supply wiring 5.Since the wiring 72 is also connected to the conductive layer 51 for thebonding pad 4 d through the wiring 53 b and the pulling-out region 24,the wiring 72 is also electrically connected to the bonding pad 4 d andthe power supply wiring 5 to be supplied with power supply electricpotential. In addition, since the bonding pad 4 e is electricallyconnected to the grounding wiring 6, the bonding pad 4 e is capable ofsupplying grounding electric potential (grounding voltage) to thegrounding wiring 6. Since the wiring 71 is also connected to theconductive layer 51 for the bonding pad 4 e through the wiring 53 c andthe pulling-out region 24, the wiring 71 is also electrically connectedto the bonding pad 4 e and the grounding wiring 6 to be supplied withgrounding electric potential.

Since the wiring 71 extends from over the nMISFET forming region 21 band the diode element forming region 23 b to over the nMISFET formingregion 21 c and the diode element forming region 23 c, the p-typesemiconductor region 64 in the diode element forming regions 23 b and 25b and the n-type semiconductor region 62 b in the nMISFET formingregions 21 b and 27 b can be connected to the wiring 71 (the wiring 71electrically connected to the grounding wiring 6) extending thereover.In addition, since the wiring 72 extends from over the diode elementforming region 25 b and the nMISFET forming region 27 b to over thediode element forming region 25 c and the nMISFET forming region 27 c,the n-type semiconductor region 63 in the diode element forming regions23 c and 25 c and the n-type semiconductor region 62 b in the nMISFETforming regions 21 c and 27 c can be connected to the wiring 72 (thewiring 72 electrically connected to the power supply wiring 5) extendingthereover.

Thus providing the wirings 71 and 72 enables simplifying routing thewirings for connecting the diodes D5 and D6 and the nMISFETs Qn5 and Qn6to the grounding wiring 6 and for connecting the diodes D7 and D8 andthe nMISFETs Qn7 and Qn8 to the power supply wiring 5. In addition, thewiring for connecting the diodes D5 and D6 and the nMISFETs Qn5 and Qn6to the grounding wiring 6 can be substantially equalized in length withthe wiring for connecting the diodes D7 and D8 and the nMISFETs Qn7 andQn8 to the power supply wiring 5, which allows the performances of thesemiconductor device to be further improved.

Although the invention made by the present inventors has been describedin detail referring to the embodiments, the invention is no way limitedonly to the foregoing embodiments but can be varied within a scope notdeparting from the gist thereof.

The present invention is suitable to be applied to a semiconductordevice with bonding pads.

1-20. (canceled)
 21. A semiconductor device comprising: a semiconductorsubstrate; first and second input/output circuit portions formed in thesemiconductor substrate; first and second wirings formed over theinput/output circuit portion; a first supply wiring formed over thefirst and second wirings; a second supply wiring formed over the firstand second wirings, and having different electrical potential from thefirst supply wiring; a first bonding pad formed over the first andsecond power supply wirings, and electrically connected to the firstinput/output circuit portion via the first wiring; a second bonding padformed over the first and second power supply wirings, and electricallyconnected to the second input/output circuit portion via the secondwiring; an insulating film formed over the first and second bondingpads; a first opening formed in the insulating film so as to expose thefirst bonding pad; and a second opening formed in the insulating film soas to expose the second bonding pad; wherein the first input/outputcircuit portion has a first region, a second region and a firstpulling-out region provided between the first and second regions,wherein the second input/output circuit portion has a third region, afourth region and a second pulling-out region provided between the thirdand fourth regions, wherein the first and third regions are arrangednearer to an end of the semiconductor device than where the second andfourth regions are arranged, wherein the first wiring is arranged overthe first pulling-out region, wherein the second wiring is arranged overthe second pulling-out region, wherein the first and second power supplywirings extend in a first direction along the end of the semiconductordevice, wherein the first power supply wiring is arranged over the firstand third regions, wherein the second power supply wiring is arrangedover the second and third regions, wherein the first bonding pad isarranged over the first region, wherein the second bonding pad isarranged over the fourth region, wherein the first insulating filmopening is arranged over the first region and not over the secondregion, and wherein the second insulating film opening is arranged overthe fourth region and not over the third region.
 22. The semiconductordevice according to claim 21, wherein one of the first and the secondpower supply wirings is a grounding wiring.
 23. The semiconductor deviceaccording to claim 21, wherein one of the first and bonding pads is forinputting and outputting signals.
 24. The semiconductor device accordingto claim 21, wherein each of the first and second input/output circuitportions include first and second MISFET elements, first and secondresistance elements and first and second diode elements.
 25. Thesemiconductor device according to claim 24, wherein a region where thefirst MISFET element is formed, a region where the first resistanceelement is formed, a region where the first diode is formed, a regionwhere the pulling-out region is formed, a region where the second diodeis formed, a region where the second resistance element is formed, and aregion where the second MISFET element is formed are arranged in thisorder on a main surface of the semiconductor substrate.
 26. Thesemiconductor device according to claim 25, wherein a region where thefirst MISFET element is formed, a region where the first resistanceelement is formed, a region where the first diode is formed, a regionwhere the pulling-out region is formed, a region where the second diodeis formed, a region where the second resistance element is formed, and aregion where the second MISFET element is formed are arranged in thisorder in a direction intersecting with the first direction.
 27. Thesemiconductor device according to claim 25, wherein the first bondingpad is connected to the first power supply wiring through the firstdiode element, wherein the first bonding pad is connected to the secondpower supply wiring through the second diode element, wherein the firstbonding pad is electrically connected to one of the source and the drainof the first MISFET element through the first resistance element,wherein the first bonding pad is electrically connected to one of thesource and the drain of the second MISFET element through the secondresistance element, wherein the other of the source and the drain of thefirst MISFET element is connected to the first power supply wiring, andwherein the other of the source and the drain of the second MISFETelement is connected to the second power supply wiring.
 28. Thesemiconductor device according to claim 27, wherein a region where thefirst MISFET element is formed, a region where the first resistanceelement is formed, a region where the first diode is formed, a regionwhere the pulling-out region is formed, a region where the second diodeis formed, a region where the second resistance element is formed, and aregion where the second MISFET element is formed are arranged in thisorder in a direction intersecting with the direction to which the firstand the second power supply wirings extend.
 29. The semiconductor deviceaccording to claim 21, wherein the input/output circuit portion includesthe first resistance element and the first diode element, and the secondresistance element and the second diode element.
 30. A semiconductordevice comprising: a semiconductor substrate; first and secondinput/output circuit portions formed in the semiconductor substrate;first and second wirings formed over the first and second input/outputcircuit portions; a first supply wiring formed over the first and secondwirings; a second supply wiring formed over the first and secondwirings, and having different electrical potential from the first supplywiring; a first bonding pad formed over the first and second powersupply wirings, and electrically connected to the first input/outputcircuit portion via the first wiring; a second bonding pad formed overthe first and second power supply wirings, and electrically connected tothe second input/output circuit portion via the second wiring; aninsulating film formed over the first and second bonding pads; a firstopening formed in the insulating film so as to expose the first bondingpad; and a second opening formed in the insulating film so as to exposethe second bonding pad; wherein the first input/output circuit portionhas a first region, a second region and a first pulling-out regionprovided between the first and second regions, wherein the secondinput/output circuit portion has a third region, a fourth region and asecond pulling-out region provided between the third and fourth regions,wherein the first and third regions are arranged nearer to an end of thesemiconductor device than where the second and fourth regions arearranged, wherein the first wiring is arranged over the firstpulling-out region, wherein the second wiring is arranged over thesecond pulling-out region, wherein the first and second power supplywirings extend in a first direction along the end of the semiconductordevice, wherein the first power supply wiring is arranged over the firstand third regions, wherein the second power supply wiring is arrangedover the second and third regions, wherein the first bonding pad isarranged over the first region, wherein the second bonding pad isarranged over the fourth region, wherein the first opening is arrangedover the first region and not over the second region, wherein the secondopening is arranged over the fourth region and not over the thirdregion, wherein the first input/output circuit portion includes a firstMISFET element, a first resistance element and a first diode element inthe first region, and a second MISFET element, a second resistanceelement and a second diode element in the second region, and wherein thesecond input/output circuit portion includes a third MISFET element, athird resistance element and a third diode element in the third region,and a fourth MISFET element, a fourth resistance element and a fourthdiode element in the fourth region.
 31. The semiconductor deviceaccording to claim 30, wherein one of the first and the second powersupply wirings is a grounding wiring.
 32. The semiconductor deviceaccording to claim 30, wherein one of the first and bonding pads is forinputting and outputting signals.
 33. The semiconductor device accordingto claim 30, wherein a region where the first MISFET element is formed,a region where the first resistance element is formed, a region wherethe first diode is formed, a region where the pulling-out region isformed, a region where the second diode is formed, a region where thesecond resistance element is formed, and a region where the secondMISFET element is formed are arranged in this order on a main surface ofthe semiconductor substrate.
 34. The semiconductor device according toclaim 33, wherein a region where the first MISFET element is formed, aregion where the first resistance element is formed, a region where thefirst diode is formed, a region where the pulling-out region is formed,a region where the second diode is formed, a region where the secondresistance element is formed, and a region where the second MISFETelement is formed are arranged in this order in a direction intersectingwith the first direction.
 35. The semiconductor device according toclaim 30, wherein the first bonding pad is connected to the first powersupply wiring through the first diode element, wherein the first bondingpad is connected to the second power supply wiring through the seconddiode element, wherein the first bonding pad is electrically connectedto one of the source and the drain of the first MISFET element throughthe first resistance element, wherein the first bonding pad iselectrically connected to one of the source and the drain of the secondMISFET element through the second resistance element, wherein the otherof the source and the drain of the first MISFET element is connected tothe first power supply wiring, and wherein the other of the source andthe drain of the second MISFET element is connected to the second powersupply wiring.
 36. The semiconductor device according to claim 35,wherein a region where the first MISFET element is formed, a regionwhere the first resistance element is formed, a region where the firstdiode is formed, a region where the pulling-out region is formed, aregion where the second diode is formed, a region where the secondresistance element is formed, and a region where the second MISFETelement is formed are arranged in this order in a direction intersectingwith the direction to which the first and the second power supply wiringextend.